inchange semiconductor product specification silicon npn power transistors 2SC3710 description ? with to-220fa package ? complement to type 2sa1452 ? low collector saturation voltage ? high speed switching time applications ? high current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i b base current 2 a p c collector dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3710 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 80 v v cesat collector-emitter saturation voltage i c =6a;i b =0.3a 0.2 0.4 v v besat base-emitter saturation voltage i c =6a;i b =0.3a 0.9 1.2 v i cbo collector cut-off current v cb =80v; i e =0 10 | a i ebo emitter cut-off current v eb =6v; i c =0 10 | a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =6a ; v ce =1v 40 c ob output capacitance i e =0 ; v cb =10v, f=1mhz 220 pf f t transition frequency i c =1a ; v ce =5v 80 mhz switching times t on turn-on time 0.2 | s t s storage time 1.0 | s t f fall time i b1 =-i b2 =0.3a v cc ?? 30v ,r l =5 |? 0.2 | s ? h fe-1 classifications o y 70-140 120-240
inchange semiconductor product specification 3 silicon npn power transistors 2SC3710 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC3710
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